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| 2SA1693 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1693 -80 -80 -6 -6 -3 60(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Audio and General Purpose (Ta=25C) 2SA1693 -10max -10max -80min 50min -1.5max 20typ 150typ V MHz pF 20.0min 4.0max 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 1.4 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=-80V VEB=-6V IC=-50mA VCE=-4V, IC=-2A IC=-2A, IB=-0.2A VCE=-12V, IE=0.5A VCB=-10V, f=1MHz External Dimensions MT-100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 Unit A A 19.90.3 V 4.0 a b o3.20.1 2 hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) -30 RL () 10 IC (A) -3 VBB1 (V) -10 VBB2 (V) 5 IB1 (A) -0.3 IB2 (A) 0.3 ton (s) 0.18typ tstg (s) 1.10typ tf (s) 0.21typ Weight : Approx 6.0g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) -6 -2 0 0m A - 0 15 VCE( sat ) - IB Characteristics (Typical) -3 Collector-Emitter Saturation Voltage V C E (s at)( V ) I C - V BE Temperature Characteristics (Typical) -6 (VCE=-4V) mA -1 00 m A -8 0m A Collector Current I C( A) Collector Current I C( A) -4 -50mA -2 -4 -30mA e Te mp) e Te mp) Cas -2 -20mA -1 IC=-6A -4A -2A 0 0 -0.5 -1.0 -1.5 -2 I B= -10mA C ( (Cas 0 0 -1 -2 -3 -4 0 0 -30C 25C 125 -1 Base-Emittor Voltage V B E( V) (Case Temp ) -2 Collector-Emitter Voltage V C E( V) Base Current I B( A) h FE - IC Characteristics (Typical) (V C E= -4V) 300 DC Curr ent Gain h FE hFE - IC Temperature Characteristics (Typical) (V C E= -4V) 300 DC Cur rent Gain h FE 125C 25C 100 -30C j-a - t Characteristics j- a( C/W) Transient Thermal Resistance 5 Typ 100 1 50 50 0.5 0.3 30 -0.02 -0.1 -0.5 -1 -5 -6 30 -0.02 -0.1 -0.5 -1 -5 -6 1 10 100 Time t(ms) 1000 2000 Collector Current I C( A) Collector Current I C( A) fT - IE Characteristics (Typical) (V C E= -12V) 30 -20 Safe Operating Area (Single Pulse) 60 10 P c - T a Derating Typ Cut -off Fre quen cy f T( M H Z) Collector Curr ent I C( A) s -5 20 100ms M aximum Power Dissipa ti on P C( W) -10 m W ith DC 40 In fin ite he at si -1 -0.5 Without Heatsink Natural Cooling nk 10 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 56 -0.1 -5 -10 -50 -100 3.5 0 0 25 50 75 100 125 150 Emitter Current I E( A) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 27 This datasheet has been downloaded from: www..com Datasheets for electronic components. |
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